PART |
Description |
Maker |
W971GG8KB-25-TR |
16M 8 BANKS 8 BIT DDR2 SDRAM
|
Winbond
|
W9751G8KB |
16M x 4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
W9751G6KB |
8M X 4 BANKS X 16 BIT DDR2 SDRAM
|
Winbond
|
W9725G8JB |
8M ?4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
W972GG8JB |
32M ?8 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
48SD1616 48SD1616RPFH 48SD1616RPFK 48SD1616RPFE |
256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks 16M X 16 SYNCHRONOUS DRAM, 6 ns, DFP72
|
Maxwell Technologies, Inc
|
V54C3256164VS V54C3256164VT V54C3256404VS V54C3256 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 3.3V, 2K refresh ultra-high performance 1M x 16 SDRAM 2 banks x 512Kbit x 16
|
Mosel Vitelic Corp
|
W9825G6DH-6C |
4M 4 BANKS 16 BITS SDRAM 16M X 16 DDR DRAM, 5.4 ns, PDSO54
|
Winbond Electronics, Corp.
|
K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323L |
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYS72T512420EFA HYS72T512420EFA-25F-C HYS72T512420 |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products
|
Qimonda AG
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|